Modification Properties of the Dielectric Membrane Films using High Temperature Annealing

This paper is aimed at studying the influence of high temperature annealing on the films of silicon oxynitride, obtained by reactive magnetron sputtering of silicon in the environment of argon, nitrogen and oxygen. Annealing of the films was performed in nitrogen atmosphere within temperature range of 800 – 1200 °C. The chemical composition of obtained films and their properties were studied and their dependence on annealing temperature was shown. The recommendations on application of high temperature annealing in formation process of dielectric membrane structures for sensitive elements of semiconductor gas sensors were developed.