Optimization of Ferroelectric Polymer to Realize a Multiferroic Tunnel Junction

Optimizing the ferroelectric barrier thin film for utilizing them in multiferroic tunnel junctions (MFTJ's) is the primary goal of this paper. Polyvinylidene fluoride (PVDF) polymer has been used as a barrier material to understand the electronic transport in the multiferroic junctions. The change in the tunnel barrier height & width can be achieved by changing the ferroelectric and ferromagnetic moment configurations w.r.t electric and magnetic fields. In this paper, we discuss about the preliminary results on the electronic transport in the junctions and with a more emphasis on optimizing the smooth and crystalline phase of PVDF thin films.