Multifunctional Manganese Single Source Precursor for the Selective Deposition of MnF2 or Mn3O4

A novel Mn(II) precursor, the Mn(hfa)2●tmeda, was successfully applied to the deposition of manganese containing nanostructures in Metal Organic Chemical Vapor Deposition (MOCVD) processes at atmospheric and reduced pressure. Experimental data evidenced that different phases were obtained, selectively and reproducibly, on varying the operating pressure. Manganese difluoride (MnF2) nanorod assemblies were obtained under atmospheric pressure, while hausmannite (Mn3O4) nanostructured films were obtained under reduced pressure. X-ray diffraction patterns in grazing incidence mode and energy dispersive X-ray analyses confirmed the phase nature and composition of the manganese containing nanostructures. Field-emission scanning electron microscopy images evidenced the nanostructure morphology of both the MnF2 and Mn3O4 phases.