A Comparative Study of a Series of Dimethylgold(III) Complexes with S,S Chelating Ligands Used as MOCVD Precursors

Dimethylgold(III) complexes with S,S donor ligands having AuC2S2 coordination core are compared as precursors for gold MOCVD. Three of them are liquids, the fourth one is low-melting compound. They are non-sensitive to air and light, stable under storage, do not require special handling conditions, and show a good volatility and sufficient vaporization stability. Based on monitoring of the gas phase during the programmed heating of the compound vapor in vacuum, in hydrogen and in oxygen presence, the information concerning stability of the precursor in the gas phase and gaseous products of thermolysis was obtained. It was established that decomposition mechanism in the presence of the studied gas- reactants changed in comparison with vacuum only for diethyldithiocarbamate complex. MOCVD experiments have been performed within the temperature range 210-300 oC with and without hydrogen or oxygen. The films obtained in hydrogen presence were more thick indicating higher growth rate. Effect of gas-reactant on the morphology of the films deposited is discussed.