Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Positive and negative luminescence was observed in a type II broken-gap p-InAs/p-GaAsSb heterostructure in the mid-infrared spectral range 3–5 μm at room temperature. Interface-related radiative recombination was provided by Mn acceptor states on InAs surface. I–V characteristics behavior was discussed using the tunneling-assisted current transport mechanism through surface states. Redistribution between the interband () and interface () emission bands in electroluminescent spectra at reverse bias was found in dependence on Fermi level position pinning by surface states at the type II broken-gap heterointerface.