کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1869830 1039395 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Spin dependent electronic structure and level crossings as a function of magnetic field in InAs nanowire
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Spin dependent electronic structure and level crossings as a function of magnetic field in InAs nanowire
چکیده انگلیسی

We point out that the electric field formed in the surface inversion layer in InAs nanowires leads to effective magnetic fields, due to the Rashba effect, that are mostly aligned along the wire axis, i.e., parallel to the external magnetic field B. While this situation leads to some similarities in spin splitting between the Zeeman and Rashba effects, extensive theoretical simulations revealed that large and small spin splittings should take place alternately at Fermi energies with increasing magnetic field B, as a result of the competition between the Rashba and Zeeman spin splittings. We suggest that an experimental detection of such characteristics should bring up quantitative insights into the relative strengths between the Rashba and Zeeman magnetic fields.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Procedia - Volume 3, Issue 2, 31 January 2010, Pages 1321-1324