Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1−xMnxTe band structure

The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studied by means of angle-resolved photoemission and compared with the results of ab initio pseudopotential calculations. For Ge1−xMnxTe surface alloy, changes in the valence band induced by presence of Mn atoms are revealed.