NIR Microscopy Possibilities for the Visualization of Silicon Microelectronic Structure Topology through the Substrate

Experimental setup based on visible and NIR spectral range microscope with laser port and picosecond laser is developed for silicon integrated circuit (IC) failure analysis. The possibility of visualizing the topology of the submicron technology silicon structures from the back side of the crystal through the substrate is shown. Main features of new setup are demonstrated by some results of backside focused pulsed laser beam initiated latchup effect study. The possibility of the localization of the latchup sensitive areas under focused laser irradiation is shown. NIR light emission accompanying the latchup effect is observed and analyzed. The practical aspects of NIR microscopy for failure analysis under backside laser irradiation are discussed.