Laser Technology for Fabrication of Silicon Based Surface- Barrier Structures

Surface-barrier structures of a-C-pSi, Sb-pSi and a-C-Sb-pSi were fabricated by the vacuum deposition of Sb (∼5 nm) and amorphous carbon (∼70 nm) films onto factory quality p-type (>104 ohm cm) Si substrate (500 colonm) at the room temperature by the using of a Q-switched glass: Nd3+ laser (1.064 colonm wavelength, 30 ns pulse duration, intensity of ∼10 9 W/cm2 in the target irradiation zone). Current density-voltage characteristics of fabricated structures were investigated in the dark and under white light illumination at room temperature. Short-circuit current density Jsc=1 mA/cm2 and open-circuit voltage Voc=0.2 V for Sb-pSi and correspondingly 6 mA/cm2 and 0.26 V for Sb-pSi covered with a-C structures were obtained.