Influence of Electrical Modes on Radiation Sensitivity of Sensors based on MISFET with Nanostructure Pd Films

The results of researches of influence of ionizing radiation on the characteristics of integrated hydrogen sensors with MISFIT sensitive elements (TSE) are presented. The proposed compact models of hydrogen and radiation sensitivity take into account the changes of the threshold voltage, the transconductance and ionization currents in the different electrical modes TSE and dose rates of ionizing radiation. It is shown how the electrical modes and types of measurement circuits influence on metrological characteristics of sensors with TSE under the action of ionizing radiation.