SAXS Investigation on the Fractal Properties of MnO2 Semiconductor Thin Films

This paper presents the results of investigations on the morphology and porous concentration distribution in the MnO2 and also the fractal properties of porous semiconductor. The volume fractal dimension are stated to be order 2.9 which is a stipulation of a highly developed porous structure of MnO2. The present results provide experimental support to the theory developed earlier.