Activation of Photoluminescence of Multilayer Arrays of Silicon Rich Oxide by Oxidation at Different Temperatures

Multilayer structures composed of layers of silicon rich oxide (SRO) with high and low Si content have been prepared by low pressure chemical vapor deposition. These multilayers were oxidized at 800, 900, 1000, and 1100 °C under dry oxygen to study the possibility of photoluminescence production. Only the samples oxidized at 1000 and 1100 °C present this effect. The spectra of the two photoluminescent samples can be deconvoluted in two asymmetric peaks positioned at 1.53 and 1.73 eV. The peak at 1.73 eV has been previously found in Silicon Rich Oxide with low Si content and without Si-nanocrystals, and has been ascribed to defects in the silicon oxide matrix. The other peak has been attributed to defects in the Si-nanocrystals/SiO2 interface.