Modification in Si Surface Using Ar11+ and A1+

Surface modification on the solid has been investigated through the HCI bombarding. Ar11+ was employed to irradiate the Si(111) surface. The extracted voltage of 3 kV and 0.3 kV was selected to obtain Ar11+. Under the fluenc of 1014/cm2, the irradiated area was discriminated from the unirradiated area by the SEM. Though the extraction voltage was different, the SEM observation showed the contrast of irradiated areas was almost the same. However, for the samples irradiated by singly charged ions (SCIs), the fluence in the order of 1016/cm2 was necessary to obtain similar contrast as that of HCI irradiation. Thus, compared to the singly charged ions, the HCIs are able to enhance the nanoprocess effectively on the solid surface