Molecular Dynamics Simulations of Atomic H Etching SiC Surface

In this paper, molecular dynamics simulations were performed to study interactions between atomic H and SiC, silicon carbon surfaces were continuously bombarded by atomic H with different energies. The Tersoff-Brenner potentials were implemented. The simulation results show that with increasing incident energy, the retention rate of H atoms on the surface increases linerly. A large number of H atoms depositing on the surface results in the forming of Si,C and H layer on the surface and with increasing incident energy, H atoms penetrate deeper into the substrate, the thickness of the layer increases. The products H, H2 and SiH4 are dominant among the sputtering products, the number of H, H2 is much more than SiH4. And products are also different at different energies.