Dedicated in the Memory of Professor Ulrich Gösele. Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties

It has been shown by means of EPR and NMR technique that at the Si-SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130°C the dencity of point defects is less than at lower and higher temperature (1100°C and 1200°C) and the content of absorbed impurities (hydrogen, oxygen) diminishes.