Microstructure and Property of Self-format Graded Diffusion Barrier in Cu(Zr)/ZrN Film System

In this paper, Cu(Zr)/ZrN alloy film system on Si(100) substrates were sputtered using magnetron co-sputtering technology. The Cu films sputtered with magnetron sputtering were used as control experiments. Microstructure and properties of the films system were investigated by four-Point Probe (FPP) sheet–resistance measurement, XRD, HRTEM respectively. After annealed at 500°C, Cu(Zr)/ZrN/Si system films self-formed a layer about 5 nm between the alloy layer and ZrN interface, which was an self-format amorphous Zr-rich barrier layer. Therefore, a gradient Zr/ZrN double-diffusion barrier layer can effectively block the interaction between Cu and Si substrate.