The study of Si(5 5 12) cleaning in the ultra-high vacuum conditions

The LEED patterns, electronic structure and morphology of Si(5 5 12) substrate surface were studied after different temperature cleaning procedures: high temperature (1250 oC), low temperature (900 oC) and cleaning at 800 oC in low silicon atom flow. The low temperature annealing without using of Si flow has been determined as the optimal cleaning procedure for Si(5 512) substrate.