Al- and Cu-doped films on Si(111) substrate by molecular beam epitaxy and evaluation of depth profiles of Al and Cu atoms

The main objective of the present work is to evaluate and compare the depth profiles of Al and Cu atoms in in-situ doped . Furthermore, it is also desired to investigate and compare the carrier concentration of Al-doped as well as Cu-doped films and qualify as a potential dopant-candidate for more efficient solar cells of . During the experiment, reactive deposition epitaxy and molecular beam epitaxy were used to develop the samples. X-ray diffraction (XRD) measurements and secondary ion mass spectroscopy (SIMS), were used to determine the structure, depth profile and composition of the already grown films. The electrical properties were characterized by Hall measurement using the van der Pauw method. In case of Al-doped films, it was not encouraging result due to diffusion and segregation of Al in both the surface and interface regions. On the other hand, those phenomena were not observed for Cu-doped films. Heavily Cu-doped showed n+ conductivity, differently from our prediction.