Molecular beam epitaxy of β- films on Si(111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC

We have studied the influence of molecular beam epitaxy (MBE) of β- films on minority-carrier diffusion length of an n-type Si(111) substrate. It was found from electron beam induced current technique that the diffusion length was less influenced in sample formed with a β- template prior to the MBE growth than that in sample grown without the template. The size of β- grains measured by electron back-scatter diffraction was also discussed.