Growth of Al-doped p-type films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties

We have grown Al-doped films by molecular beam epitaxy. It was found from the Hall measurements that the Al-doped showed p-type conductivity, and the hole concentration in as-grown was limited to the order of at room temperature. The Al atoms in the diffused out from the by high-temperature annealing and segregated in both the surface and /Si heterointerface regions.