کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1872433 | 1531011 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultra high vacuum growth of CrSi2 and β-FeSi2 nanoislands and Si top layers on the plasma modified monocrystalline silicon surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A set of silicon substrates processed by compression plasma was studied by means of atomic force microscopy (AFM). AFM data revealed a threshold nature (in terms of plasma flow energy) of the formation of tube-like surface structures (SS) observed as “waves” regardless of the conductivity type, resistivity, and the substrate orientation ((111) or (100)). For the first time nanoheterostructures Si(111)/NC CrSi2/Si and Si(100)/NC β-FeSi2/Si have been formed on silicon substrates processed by compression plasma flow. Avery high density of CrSi2 nanoislands - (2-3)Ã1011 cmâ2 was obtained for Cr-Si system but in the case of Fe-Si system the β-FeSi2 nanoislands density was only about 2Ã109 cmâ2. According to the optical spectroscopy data during the process of silicon capping layer formation the CrSi2 and β-FeSi2 nanocrystals move up to the surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Procedia - Volume 11, 2011, Pages 39-42
Journal: Physics Procedia - Volume 11, 2011, Pages 39-42
نویسندگان
Nikolay G. Galkin, Valiantsin M. Astashynski, Evgenii A. Chusovitin, Konstantin N. Galkin, Tatyana A. Dergacheva, Anton M. Kuzmitski, Evgenii A. Kostyukevich,