Formation of nanocrystalline CrSi2 layers in Si by ion implantation and pulsed annealing

In this work buried nanocrystalline CrSi2 layers were synthesized by ion implantation, pulsed annealing and MBE. The structural, optical and thermoelectrical properties of CrSi2 layers were studied by methods of SEM, TEM, RBS, PL and Seebeck coefficient measurements. The characteristic features of pulsed nanosecond annealing of Cr-implanted Si and epitaxial growth of triple Si/nc–CrSi2/Si heterostructures were established. It is shown that grown Si/nc–CrSi2/Si heterostructures, which preliminary implanted with the high-dose () of Cr+ ions, have the noticeable low temperature () photoluminescence signal at 1450–1600 nm and the large Seebeck coefficient (−(60–300) μV/K) in the temperature range of .