Determination of silicon vacancy in ion-beam synthesized

It has been reported that light emission from semiconducting is enhanced by long time annealing. The enhancement of emission may be adapted to reduction of Si vacancy in . However, less sufficient evidence of the reduction of Si vacancy during annealing has been reported. In this study, we deduced concentration of Si vacancy in each depth as a function of annealing time from analysis of Rutherford backscattering random spectra.