کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1872448 1531011 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study on the electronic structure and optical properties of the environmentally friendly semiconductor Ca3Si4
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Study on the electronic structure and optical properties of the environmentally friendly semiconductor Ca3Si4
چکیده انگلیسی

In this paper, electronic structure and optical properties of the bulk of the new-type environment friendly semiconductor material Ca3Si4 are investigated in detail by using first principles pseudo-potential calculations based on the density function theory. The calculation results show that: Ca3Si4 is a semiconducting material with an indirect band gap and the band gap is 0.375 eV; The valence bands of Ca3Si4 are mainly composed of Si 3p as well as 3s, the conduction bands are mainly composed of Ca 3d; The static dielectric constant is 20; The absorption coefficient maximum is 1.7×105 cm−1.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Procedia - Volume 11, 2011, Pages 99-102