Current-induced magnetization switching in Fe3Si/FeSi2 superlattices

Fe3Si/FeSi2 superlattices were prepared on Si(111) by facing targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane (CPP) geometry was studied for the antiferromagnetically coupled films. The electrical resistance was alternatively changed for the injected current. The large and small vales were in agreement with those of the films with antiferromagnetic and ferromagnetic interlayer-couplings. The change in the electrical conductivity for the injected current should be due to the change in the interlayer coupling. Under a magnetic field, the electrical resistivity was hardly changed for the injected current since the interlayer-coupling is fixed to be ferromagnetic.