Cathodoluminescence investigations of GaAs thin layers

In this work, we report the theoretical results of cathodoluminescence (CL) for GaAs layer. The simulation of the CL excitation and intensity is developed using 2-D model based on the electron beam energy dissipation and taking into account the effects of carrier diffusion, internal absorption and the recombination process in the semiconductors.We have investigated the influence of the electron beam conditions (energy, current and beam diameter) and some physical parameters (absorption coefficient, gap energy) on the CL intensity. Results allow us particularly to predict the intensity evolution and shift of CL peak emitted near the fundamental energy gap as a function of the electron beam current and energy. A comparative study between simulated and experimental CL spectra at low temperature is realized.