Contribution to the study of recombination at the interface spherical precipitate/p-type semiconductor in the EBIC mode

This work is a contribution to the understanding of some recombination processes occurring at the interface spherical precipitate/p-type semiconductor in the EBIC mode.The calculations, which adopt a self consistent procedure and are in live with the Hall Shockley Read (SRH) framework, consist to appreciate the respective variations of the precipitate barrier height, Eb, and of the effective recombination velocity, Seff, as a function of some physical parameters such as the precipitate size, R, the Read sphere, , the interface state density, Nt, or the doping concentration, Na.The bending evolution of the minority carrier quasi Fermi level in the precipitate space charge and quasi neutral regions, and respectively, is taken into account, while the majority carrier one is considered constant.The obtained results show in particular that Seff and Eb strongly depend of the doping concentration, Na, and of the interfacial state density of defects, Nt.Moreover, it appears that Seff is nearly proportional to exp(Eb/kbT), in our operating conditions.