Application of the Monte Carlo Method for the Calculation of Electrical Properties, in both Wurtzite and Zinc Blende Phases, of Gallium Nitride

The gallium nitride (GaN) presents very good mechanical, chemical and physical properties, as high velocities. These properties make it more attractive for high power, temperature and frequency electronic applications.In this paper, the main electrical properties of GaN are first presented; then its advantages over the other semi-conductors are studied. In the following section; the main steps of the used method, Monte Carlo simulation, are described. The next section is concerned with a study of some electrical properties of bulk GaN. In stationary state, we calculate electron mobility according to temperature variation, and drift velocity according to electric field variation. In transient state, we calculate the electron velocity according to time variation. We consider the acoustic, piezo-electric, ionized impurities and intervalley polar optical phonon scatterings. The results we obtained are in good agreement with those obtained by other researchers in the same field.