A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs

In this paper a novel InxAl1-xN/GaN heterostructure device is proposed by introducing a thin binary layer of strained (In, Al, Ga)-N channel at the heterointerface. The spontaneous polarization fields of III-N ternary alloys are derived as per Vegard's rule. The band engineering leading to the formation of two dimensional electron gas (2DEG) has been discussed by simulating the different heterostructures by solving 1D Schrodinger and Poisson's equation self-consistently and the energy bands are calculated. Comparative studies of electronic transport properties of charge carriers in the 2DEG are also investigated for the different proposed structures. Charge concentrations throughout the structure were analyzed which show the confinement of charge carriers in the Quantum Well/2DEG at the heterointerface are maximum. The electric field variation with structure depth from surface to bottom and as a function of 2DEG density has also been investigated. High 2DEG density ensures high electric field is realized from the 2DEG study of different proposed heterostructures.