A Study on Metal-Insulator-Silicon Hydrogen Sensor with LaTiON as Gate Insulator

Amongst the many types of semiconductor hydrogen sensors currently studied, Schottky-diodes are preferable as they are simple to fabricate and exhibit high sensitivities and fast response times. To enhance the sensor's performance, a gate insulator is deposited in order to minimize interfacial diffusion between the electrode and the substrate. In this work, we present a novel MIS Schottky-diode hydrogen sensor with LaTiON as gate insulator. The hydrogen-sensing properties (sensitivity, barrier height variation) were examined from room temperature (RT) to 150 °C and its sensitivity was found to reach 2.5 at 100 °C. Moreover, the hydrogen reaction kinetics were studied and these results showed that the sensor was very sensitive to hydrogen ambient.