Resonant Impurity Scattering in a Quantum Well

A problem of impurity scattering in a quantum well (QW) is considered. The general approach for calculation of scattering amplitude is formulated. It contains two contributions - potential (as well known formula of Born approximation) and resonant. The results of calculations are presented for Si/SiGe QW. Resonance contribution to the scattering cross section manifests itself as typical asymmetric Fano peaks.