Effect of Ion Beam Bombarding on Stress in TiO2 Thin Films

TiO2 films were fabricated on Si substrate by using electron-beam gun evaporation. Influence of deposition rate, deposition temperature and ion beam bombarding on stress in TiO2 films was studied by AFM. The results show that deposition temperature of 423K and deposition rate of 0.2 nm/s, the average stress in TiO2 thin films is less than 48.2 MPa. The average stress decreases to compressive stress of 16.7 MPa from tensile stress of 72.9 MPa by the ion beam energy of 113 eV and bombarding time of 300 s.