Maxwell-Wagner type interfacial relaxation process in a doublelayer device investigated by time and frequency domain approaches

The Maxwell-Wagner type interfacial relaxation processes in a double-layer device with a polyimide (PI) blocking layer were investigated by time and frequency domain methods. From time-resolved second harmonic generation, it is indicated that both holes and electrons can be injected into the active layer and accumulated at the active layer/PI interface. However, detailed characteristics between hole and electron carrier cases were different. From impedance spectroscopy, it implies that the interfacial relaxation only occurred in the hole accumulation case. The differences and connections between those two methods were discussed.