Electrical Characterization of n-ZnO/p-Si Heterojunction Prepared by Spray Pyrolysis Technique

The study reports the experimental and the electrical junction properties analysis of current–voltage characteristics of n-ZnO/p-Si heterostructures. Wide band gap semiconducting layer of n-type ZnO thin film was fabricated on p-type Si wafer with spray pyrolysis technique at 550C° to form n-ZnO/ p-Si heterojunctions. The current-voltage characteristic of the n-Zn0/ p-Si heterojunction device has been measured at room temperature in the dark and under illumination (lamp/160 W). The characteristic parameters of the structure such as barrier height, ideality factor and series resistance were determined from the current-voltage measurement.