The study of high Curie temperature ferromagnetism properties in Mn-doped SiC thin film

Mn-doped 3C-SiC film has been prepared onto the Si (1 1 1) substrate by employing a molecular beam epitaxy method. The experimental analysis establishes that the prepared sample shows the ferromagnetic property with a relatively high Curie temperature (Tc) of 355 K, which is an exciting phenomenon on account of the scarceness in the SiC-based diluted magnetic semiconductor. The analysis derived from the X-ray diffraction and absorption spectroscopy patterns indicates that Mn atoms should react with Si atoms and then form Mn4Si7 compounds. Combined with the theoretical simulation, it is speculated that a new alloy phase of Mn4Si7Cx maybe appear, which should be responsible for the exceptionally high Tc ferromagnetic behavior in the sample.