Effects of band offsets and the dielectric confinement on exciton binding energy in a strained Zn1-xinMgxinSe/Zn1-xoutMgxoutSeZn1-xinMgxinSe/Zn1-xoutMgxoutSe quantum dot

On the basis of model solid theory, the band offsets for a Zn1-xinMgxinSe/Zn1-xoutMgxoutSeZn1-xinMgxinSe/Zn1-xoutMgxoutSe quantum dot structure are determined. The exciton binding energies due to heavy and light holes with the variation of Mg alloy are reported. The effect of mismatch between the dielectric constants between the dot and the barrier is taken into account. The exciton transition energy as functions of dot radius and Mg content is computed. The dependence of the excitonic transition energies on the geometrical confinement and the Mg alloy is brought out.

► On the basis of model solid theory, the band offsets for a II–VI quantum dot structure are determined.
► The exciton binding energies due to heavy and light holes with the variation of Mg alloy are reported.
► The effect of mismatch is taken into account.
► The exciton transition energy as functions of dot radius and Mg content is computed.
► The dependence of the excitonic transition energies on the geometrical confinement is brought out.