Growth and scintillation properties of (Lu1 − x Tmx)2SiO5 [x = 0.001, 0.01, 0.1, 1]

(Lu1 − xTmx)2SiO5 (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the μ-PD method. In transmittance measurement, absorption bands due to Tm3+ 4f–4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the 3H6 ground state to its excited states, 1I6, 3P6,1D2, 1G4, 3F3 and 3H4, respectively. Strong emission peak due to 1D2 → 3F4 transition of Tm3+ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 μs. Tm 1% doped one exhibited the highest light yield of 3530 ± 200 photons/MeV when excited by 137Cs gamma-ray exposure.

► (Lu1 − xTmx)2SiO5 single crystals were grown by the μ-PD method.
► The Tm3+ 4f–4f emission and absorption lines were observed.
► The scintillation decay times were evaluated as 11.9–13.5 μs.
► Pulse height measurements showed the 1% Tm sample had the highest light yield.
► Quenching was observed in higher Tm concentration.