کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1883439 | 1533412 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of radial dose effect on single event upset cross-section due to heavy ions using GEANT4
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of radial dose effect on single event upset cross-section due to heavy ions using GEANT4 Investigation of radial dose effect on single event upset cross-section due to heavy ions using GEANT4](/preview/png/1883439.png)
چکیده انگلیسی
The results showed that heavy ions with identical LET can have different SEU cross-section in silicon transistors. As a demonstrative example, according to our results, the error probability for 4.8Â GeV iron was 8 times greater than that for 15Â MeV carbon ions, in transistors with new process technology which have small dimension and low critical charges. Our results show that considering radial dose distribution considerably improves the accuracy of the SEU cross-section estimation in electronic devices especially for new technologies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Measurements - Volume 78, July 2015, Pages 42-47
Journal: Radiation Measurements - Volume 78, July 2015, Pages 42-47
نویسندگان
S. Boorboor, S.A.H. Feghhi, H. Jafari,