Alpha-particle response of an InSb radiation detector made of liquid-phase epitaxially-grown crystal

We fabricate a radiation detector using a p-type InSb crystal grown using the liquid-phase-epitaxy (LPE) method. The energy resolution for 5.5-MeV alpha particles was improved 2.4% from 2.9% through the application of bias voltage. This value represents a significant improvement over that of previously fabricated devices, 15–40%.