Revealing the radiation-induced effects in silicon by processing at enhanced temperatures-pressures

Effect of processing at up to 1400 K under Ar hydrostatic pressure (HP) equal to 1.1 GPa for oxygen-containing Czochralski grown silicon (Cz-Si) irradiated with neutrons (energy E=5MeV, dose D=1×1017cm-2) or γ-rays (E=1.2MeV, D=1000Mrad) on oxygen clustering and precipitation has been investigated by electrical, X-ray, infrared absorption, and photoluminescence methods. Depending on irradiation conditions, processing of irradiated Cz-Si, especially under HP, results in creation of oxygen-containing defects. Such processing of irradiated Cz-Si is helpful for revealing its irradiation-related history.