کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
2147152 1548395 2008 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Large inverted repeats in the vicinity of a single double-strand break strongly affect repair in yeast diploids lacking Rad51
موضوعات مرتبط
علوم زیستی و بیوفناوری بیوشیمی، ژنتیک و زیست شناسی مولکولی تحقیقات سرطان
پیش نمایش صفحه اول مقاله
Large inverted repeats in the vicinity of a single double-strand break strongly affect repair in yeast diploids lacking Rad51
چکیده انگلیسی

DNA double-strand breaks (DSBs) are critical lesions that can lead to cell death or chromosomal rearrangements. Rad51 is necessary for most mitotic and meiotic DSB repair events, although a number of RAD51-independent pathways exist. Previously, we described DSB repair in rad51Δ yeast diploids that was stimulated by a DNA region termed “facilitator of break-induced replication” (FBI) located approximately 30 kb from the site of an HO-induced DSB. Here, we demonstrate that FBI is a large inverted DNA repeat that channels the repair of DSBs into the single-strand annealing-gross chromosomal rearrangements (SSA-GCR) pathway. Further, analysis of DSB repair in rad54Δ cells allowed us to propose that the SSA-GCR repair pathway is suppressed in the presence of Rad51p. Therefore, an additional role of Rad51 might be to protect eukaryotic genomes from instabilities by preventing chromosomal rearrangements.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Mutation Research/Fundamental and Molecular Mechanisms of Mutagenesis - Volume 645, Issues 1–2, 14 October 2008, Pages 9–18
نویسندگان
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