Application of mercaptoacetic acid as a capping agent, solvent, and precursor to fabricate In2S3 nanostructures

In this work, In2S3 nanostructures have been successfully prepared via a simple wet chemistry method at room temperature. By using mercaptoacetic acid (TGA) as a capping agent, solvent, and sulfide precursor with different concentrations, In2S3 nanostructures were obtained. The effects of reaction time, reaction temperature, and concentration of precursor on the morphology and the particle size was also studied. The as-prepared In2S3nanoparticles were characterized extensively by techniques like XRD, TEM, SEM, PL, and EDX. Photoluminescence study of the In2S3 nanoparticles displayed quantum confinement behavior with band gap of 2.74 eV.