کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
229354 464867 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis of gallium-catalyzed silicon nanowires by hydrogen radical-assisted deposition method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Synthesis of gallium-catalyzed silicon nanowires by hydrogen radical-assisted deposition method
چکیده انگلیسی

Gallium-catalyzed silicon nanowires (SiNWs) were synthesized by the hydrogen radical-assisted deposition method. The voluminous quantities of SiNWs with various crystal growth directions were synthesized and their characteristics were estimated by using XRD, FE-SEM, TEM and EDX analyses. Most of the Ga-capped SiNWs were directly grown with some smoothly curved SiNWs. Large quantities of small-SiNWs with diameters of 20–80 nm were tree-likely grown on the large-SiNWs surface. The diameters of large-SiNWs were approximately 200 nm–2 μm. Furthermore, a simple model of growth mechanism for sub-grown silicon nanowires by the hydrogen radical-assisted deposition method was proposed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Industrial and Engineering Chemistry - Volume 14, Issue 6, November 2008, Pages 836–840
نویسندگان
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