کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
229354 | 464867 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis of gallium-catalyzed silicon nanowires by hydrogen radical-assisted deposition method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
Gallium-catalyzed silicon nanowires (SiNWs) were synthesized by the hydrogen radical-assisted deposition method. The voluminous quantities of SiNWs with various crystal growth directions were synthesized and their characteristics were estimated by using XRD, FE-SEM, TEM and EDX analyses. Most of the Ga-capped SiNWs were directly grown with some smoothly curved SiNWs. Large quantities of small-SiNWs with diameters of 20–80 nm were tree-likely grown on the large-SiNWs surface. The diameters of large-SiNWs were approximately 200 nm–2 μm. Furthermore, a simple model of growth mechanism for sub-grown silicon nanowires by the hydrogen radical-assisted deposition method was proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Industrial and Engineering Chemistry - Volume 14, Issue 6, November 2008, Pages 836–840
Journal: Journal of Industrial and Engineering Chemistry - Volume 14, Issue 6, November 2008, Pages 836–840
نویسندگان
Minsung Jeon, Yoshihiro Tomitsuka, Koichi Kamisako,