کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
235869 | 465651 | 2015 | 6 صفحه PDF | دانلود رایگان |

• InSe, In2Se3, Ga2Se3, GaSe, CuSe, Cu7Se4, Cu3Se2, CuInSe2 phases formed at 5 min milled.
• CuIn0.7Ga0.3Se2 compound powder was prepared successfully by a HEBM method.
• After milling for 50 min, a single phase of quaternary CIGS compound was formed.
We successfully prepared a homogeneous single-phase CuIn0.7Ga0.3Se2 compound powder using high-energy ball milling method. The phase evolution from initial elemental powders to intermediate metastable phases, to the final CuIn0.7Ga0.3Se2 compound at various milling stages (5 to 50 min) was thoroughly investigated. The obtained powders at various stages were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and electron probe micro-analysis (EPMA) to evaluate the crystal structure, morphology, and composition of the metastable phases. The intermediate metastable phases including InSe, In2Se3, Ga2Se3, GaSe, CuSe, Cu7Se4, Cu3Se2, and CuInSe2 were formed after 5 min milling. After milling for 50 min, a single phase of quaternary CuIn0.7Ga0.3Se2 compound formed. The average grain size of the milled powder was about 9.3 nm. The results of EPMA also confirmed that a homogeneous CuIn0.7Ga0.3Se2 alloy was formed.
Figure optionsDownload as PowerPoint slide
Journal: Powder Technology - Volume 269, January 2015, Pages 345–350