کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
236617 465682 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of Mn3O4 nanoparticles at room condition for supercapacitor application
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Preparation of Mn3O4 nanoparticles at room condition for supercapacitor application
چکیده انگلیسی

In this work, high specific capacitance of Mn3O4 is successfully synthesized via ultrasonic and hydrolyzation at room temperature. The crystal structure, phase and the electrochemical performance are dependent on the preparation conditions, such as ultrasonic time, reaction temperature, and the organic solvent used, etc. The effect of ultrasonic time and the presence of various solvents are well discussed in the crystal growth mechanism and improved supercapacitor performance of Mn3O4. The almost 100% yielded Mn3O4 nanoparticles via ultrasonication for 6 h at room temperature exhibit high specific capacitances (261 F g− 1 at 0.4 A g− 1 and 140 F g− 1 at 40 A g− 1) as well as excellent cycle life. The high yield and convenient synthetic route at room temperature make readily scaled-up production of transition metal oxides for electrochemical applications.

Mn3O4 nanoparticles with 10 nm are synthesized at room temperature via a facile ultrasonic-assisted route. Mn3O4 exhibited high specific capacitances of 262 and 140 F g− 1 at the current of 0.4 and 40 A g− 1, and excellent cycle life at various currents.Figure optionsDownload as PowerPoint slideHighlights
► Mn3O4 nanoparticles facile synthesized at room temperature via ultrasonication.
► Colloid of MnCl2 with ETA was key role to produce Mn3O4 with excellent capacitance.
► Mn3O4 delivered high capacitance of 262.1 and 140.0 F g− 1 at 0.4 and 40 A g− 1.
► Ultrasonic route at room temperature was the potential way for secondary energy material.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Powder Technology - Volume 235, February 2013, Pages 76–81
نویسندگان
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