کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
237187 465697 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and characterization of pure anatase nanocrystals by sol–gel method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Preparation and characterization of pure anatase nanocrystals by sol–gel method
چکیده انگلیسی

The nanocrystal particles with pure anatase phase were prepared by sol–gel method at the temperature of > 500 °C and characterized by TG-DTA, FT-IR, XRD, TEM and SAED. The combustion of gel powders, crystallization and phase transitions of the polymorphic phases TiO2 are discussed. The results show that the three allotropes of TiO2 form sequentially with the heating temperature increasing, which is different from many similar investigations that considered only the transition scheme “hydrous oxide gel–anatase–rutile”. The crystallization of anatase phase takes place at about 328 °C, and the phase stability region extended from 328 to 600 °C. The specimen has well crystalline morphology because of high crystallization temperature (550 °C) and the particle-size distribution ranging is between 20 and 30 nm.

It can be observed that the specimen has well crystalline morphology and uniform grain size. It has a narrow particle-size distribution ranging between 20 and 30 nm. The wide-angle electron diffraction pattern of nanocrystal particles is confirm the formation of nanocrystal anatase. Furthermore, the diffraction pattern reveals the absence of the second crystalline phase.Figure optionsDownload as PowerPoint slideHighlights
► We prepared the nanocrystal particles with pure anatase phase above 500 °C.
► The three allotropes of TiO2 form sequentially with temperature increasing.
► The phase stability region of anatase phase extended from 328 to 600 °C.
► The specimen has well crystalline morphology.
► The particle-size distribution ranging is between 20 and 30 nm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Powder Technology - Volume 224, July 2012, Pages 287–290
نویسندگان
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