Preparation and characterization of the lead-free piezoelectric ceramic of Bi0.5Na0.5TiO3 doped with CuO

This study investigates the effects of copper oxide (CuO) addition, calcining temperature, and sintering temperature on the microstructure and the electrical properties (such as dielectric constant and loss tangent) of lead-free piezoelectric ceramic of bismuth sodium titanate (Bi0.5Na0.5TiO3), BNT, which was prepared using the mixed oxide method. Three kinds of starting powders (Bi2O3, Na2CO3 and TiO2) were mixed and calcined. This calcined BNT powder and a certain weight percentage of CuO were mixed, calcined, and compressed into a green compact of BNT–CuO. This green compact of BNT–CuO was sintered to be a disk doped with CuO, and its characteristics were measured. In this study, the calcining temperature ranged from 700 to 1000 °C, the sintering temperature ranged from 950 to 1050 °C, and the weight percentages of CuO doping included 2, 4, 6, and 8 wt.%. The largest relative density of the BNT–CuO disk obtained in this study was 96.7% at the calcining temperature of 700 °C, the sintering temperature of 950 °C, and 4 wt.% of CuO addition. The corresponding dielectric constant and loss tangent were 494 and 0.181%, respectively. This study shows that adding CuO to the BNT not only improves the relative density and the dielectric constant of the BNT disk, but it also lowers the sintering temperature.

Adding CuO to the BNT not only improves the relative density of the BNT disk, but it also lowers the sintering temperature due to the liquid phase sintering. SEM micrographs (5k ×) of BNT disk doped with 4 wt% CuO at a calcining temperature of 1000 °C. (a) Sintering at 950 °C, (b) sintering at 1000 °C.Figure optionsDownload as PowerPoint slideResearch highlights
► Effects of CuO addition and sintering temperature on BNT microstructure were studied.
► The largest relative density of BNT disk sintered at 950 with 4 wt% CuO was 96.7%.
► Adding CuO improves the density of BNT disk and lowers the sintering temperature.