کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
239788 466232 2016 6 صفحه PDF سفارش دهید دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of Annealing on the Electrical Properties of CuxS Thin Films
ترجمه فارسی عنوان
اثر آنیلی بر لایه های نازک خواص الکتریکی CuxS
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موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
چکیده انگلیسی

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu2S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Procedia Chemistry - Volume 19, 2016, Pages 15-20
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