The experimental results of the bulk-driven quasi-floating-gate MOS transistor

This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) (Khateb and Khatib, 2013 [27]) MOS transistor (MOST) that was presented in AEU - International Journal of Electronics and Communications in year 2014. The BD-QFG MOST offers high transconductance value and extended common mode voltage range (CMVR) all under low-voltage supply (LV) low-power consumption (LP) conditions. Based on this technique a differential difference current conveyor (DDCC) was designed and fabricated in Cadence platform using 0.35 μm CMOS AMIS process with total chip area 213 μm × 266 μm. The voltage supply and the power consumption are ±500 mV and 37 μW, respectively. The experimental result shows near rail-to-rail common mode voltage range.