کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
445962 1443146 2015 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A simple structure for noise-shaping SAR ADC in 90 nm CMOS technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر شبکه های کامپیوتری و ارتباطات
پیش نمایش صفحه اول مقاله
A simple structure for noise-shaping SAR ADC in 90 nm CMOS technology
چکیده انگلیسی

This paper presents a simple structure for error feedback based noise-shaping successive approximation register (NSSAR) analog-to-digital converter (ADC), which obviates the need for a high output swing, fast-settling and high gain Operational Transconductance Amplifier (OTA). The ADC has a simple structure and its quantization noise is extracted and transferred via a finite impulse response (FIR) filter, without any attenuation. To make a good matching, a 5-bit segmented array is utilized as a digital-to-analog converter (DAC). In this way, the required total capacitance of the ADC is reduced more than 96% compared to a 10-bit conventional SAR (CSAR) ADC. Also, due to noise-shaping property the comparator specifications are relaxed. The ADC is designed and simulated in 90 nm CMOS technology with HSPICE simulator. Simulation results show that the ADC's average power consumption is about 4.4 μW at a 0.5 V power supply. By using an oversampling ratio (OSR) of 16, the ADC achieved maximum SNDR and SFDR of 59.6 dB and 58 dB, respectively, from transient noise simulation. The figure of merit (FoM) is about 56.4 fJ/conversion-step.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: AEU - International Journal of Electronics and Communications - Volume 69, Issue 8, August 2015, Pages 1085–1093
نویسندگان
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